A Scheme of Quantum Tunnel Field Effect Transistor Based on Armchair Graphene Nano-Ribbon

We proposed a scheme of armchair graphene nanoribbon (AGNR) based tunnel field-effect transistor (TFET). The simulated device consists two electrodes with zigzag termination that are separated by narrow gap. Fermi level is controlled common back gate. main idea on taking advantage the electronic effects smooth edge atoms and investigatinge effect applied small uniaxial tensile strain gate voltage output characteristics TFET. Our analysis shows will have pronounced negative differential conductance high peak to valley ratio at room temperature. see applying strain, this upgrades 70 for width N=13. (PVR)